| 摘要 |
PROBLEM TO BE SOLVED: To sufficiently restrain signal charges obtained in one pixel from leaking into adjacent another pixel. SOLUTION: The solid state imaging apparatus 1 comprises a photodiode 70, a power supply line Vcc, an overflow drain region 23 (33), an element isolation film 81, and a channel stop region 9. The overflow drain region 23 (33) collects excess electric charges in n-type electric charges (negative charges) generated in the photodiode 70, and discharges them to the power supply line Vcc. The channel stop region 9 is formed under the element isolation film 81. The channel stop region 9 isolates the photodiode 70 from other region. The depth of a lower end of the overflow drain region 23 (33) is deeper than the channel stop region 9 at a first position and shallower than the first position at a second position. The second position is farther away than the first position in a distance from the photodiode 70. COPYRIGHT: (C)2008,JPO&INPIT
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