| 摘要 |
PROBLEM TO BE SOLVED: To improve cutoff characteristics while suppressing a leakage current during a reverse operation. SOLUTION: A semiconductor device is composed so that a distance of a current pathway flowing between a hetero junction 5 and a contact 8 through a hetero semiconductor region 4 is longer than at least a film thickness of the hetero semiconductor region 4 due to an insulating region 3. By this, a crystal grain boundary linearly connecting the contact 8 with the hetero junction 5 is not formed even when the hetero semiconductor region 4 is formed by polysilicon. Consequently, it is possible to limit an amount of electrons supplied from a first electrode 7 to the hetero junction 5 through the crystal grain boundary. COPYRIGHT: (C)2008,JPO&INPIT
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