| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for improving reliability of wiring by preventing occurrence of stress migration failure at a via connected to a thick wire. SOLUTION: The semiconductor device of a multilayer wiring structure includes a second wire 25 provided in contact at least at one plane thereof with an insulating film having the Young's modulus of 10 GPa or less, and a via 26 connected to this wire 25. The second wire 25 has the width W of 2μm or more, and also includes a thick wire 41 at its front end connected to the via 26. The front end of this thick wire 41 is provided with a reserver 42 thinner than the width W of the thick wire 41 at the width A extending in the same direction as the thick wire 41. COPYRIGHT: (C)2008,JPO&INPIT
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