| 摘要 |
965,949. Hallplate heads. SIEMENSSCHUCKERTWERKE A.G. April 6, 1962 [April 8, 1961], No. 13423/62. Heading G5R [Also in Divisions H1 and H3] In an electrical amplifying unit, especially for use in reading magnetically recorded signals, semi-conductor material is so disposed in layer form on a base-plate and so doped, that a Hall plate and two tunnel diodes are formed, and conductive material is disposed on the base-plate to form conductors including two Hall electrodes, by way of which the tunnel diodes are connected to the Hall plate. As shown, Fig. 1, InSb is applied by vapour coating to a ceramic base-plate 1 and superfluous InSb is etched away, leaving a Hall generator 2, semi-conductor layers 7, 9, which are formed into tunnel diodes by having In pellets alloyed at 8, 10, and semi-conductor strips 13, 14, 15 which serve as ohmic resistances. Conductive areas 3, 4, 5, 6, 11, 12, 16 of e.g. Cu, are then applied by electrodeposition. Semi-conductor material other than InSb may be used, and different material may be used for the Hall plate and the tunnel diodes. In use, Fig. 2, a control D.C. is applied to the Hall plate between electrodes 3, 16, and the output is taken from electrodes 11, 12. It is shown in the specification that the voltage amplification SU A /SU H = 2. R 13 /R H , where U A = output voltage; U H = Hall voltage; R 13 = resistance of strip 13; R H = internal resistance of the Hall generator.
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