| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a shrunk area and/or a larger capacity of a memory. <P>SOLUTION: An electronic switch 24 can electrically insulate a controlling electrode such as a gate G in a programming mode to electrically float the gate in the programming mode. In the programming mode, a programming voltage Vpp is supplied across a main electric path such as a source-drain channel S-D. The programming voltage Vpp is sufficiently large to melt down the main electric path when the controlling electrode of a transistor 4 floats and not sufficient to melt down the main electric path when the controlling electrode is connected to a proper prescribed voltage instead of floating. Therefore, the transistor 4 executes selection of a memory cell while playing a role of a fusible element simultaneously. The above configuration needs smaller number of transistors which can work with a programming current necessary to melt down, enabling shrinking the area which the memory occupies. <P>COPYRIGHT: (C)2008,JPO&INPIT |
