发明名称 SUBSTRATE TREATING METHOD, SEMICONDUCTOR APPARATUS AND SUBSTRATE TREATING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate treating method by which treating hours in the filling of non-penetrated holes formed on the substrate with a conductive body by a plating method is remarkably decreased to reduce the manufacturing cost of a semiconductor apparatus, the semiconductor apparatus and a substrate treating apparatus. SOLUTION: The substrate treating method is carried out by forming the non-penetrated holes 100 on the substrate W and filling the conductive body (plated film 105) inside the non-penetrated holes 100 by the plating method. A plating solution Q contains solid particles 103. When the electroplating is carried out using the plating solution Q, the solid particles 103 are taken into the plating film 105 simultaneously with the formation of the plating film to increase the volume of the plating film 105. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007291469(A) 申请公布日期 2007.11.08
申请号 JP20060122600 申请日期 2006.04.26
申请人 EBARA CORP 发明人 SUZAKI AKIRA;NAKADA TSUTOMU
分类号 C25D7/12;C25D15/02;C25D21/12 主分类号 C25D7/12
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