发明名称 METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide the method of manufacturing an organic thin film transistor for manufacturing a high-performance thin film transistor at a simple step. SOLUTION: There is provided the method of manufacturing an organic thin film transistor comprising an organic semiconductor layer, a gate electrode formed such that it is opposed to a channel region in the organic semiconductor layer, and a source electrode and a drain electrode which sandwich the channel region therebetween. In the method of manufacturing the organic thin film transistor, the organic semiconductor layer is formed through the steps of providing a layer comprising an organic semiconductor such that the source electrode and the drain electrode are covered with the layer, providing a protective layer on the layer comprising the organic semiconductor corresponding to the channel region, and eliminating the organic semiconductor by irradiating the layer comprising the organic semiconductor with an active energy line. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007294723(A) 申请公布日期 2007.11.08
申请号 JP20060121823 申请日期 2006.04.26
申请人 KONICA MINOLTA HOLDINGS INC 发明人 OKADA MASAKAZU
分类号 H01L29/786;H01L21/336;H01L51/05;H01L51/40 主分类号 H01L29/786
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