摘要 |
PROBLEM TO BE SOLVED: To provide the method of manufacturing an organic thin film transistor for manufacturing a high-performance thin film transistor at a simple step. SOLUTION: There is provided the method of manufacturing an organic thin film transistor comprising an organic semiconductor layer, a gate electrode formed such that it is opposed to a channel region in the organic semiconductor layer, and a source electrode and a drain electrode which sandwich the channel region therebetween. In the method of manufacturing the organic thin film transistor, the organic semiconductor layer is formed through the steps of providing a layer comprising an organic semiconductor such that the source electrode and the drain electrode are covered with the layer, providing a protective layer on the layer comprising the organic semiconductor corresponding to the channel region, and eliminating the organic semiconductor by irradiating the layer comprising the organic semiconductor with an active energy line. COPYRIGHT: (C)2008,JPO&INPIT
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