发明名称 |
METHOD OF FABRICATING MEMEORY |
摘要 |
A method of fabricating a memory device is described. During the process of forming the memory cell area and the periphery area of a semiconductor device a photoresist layer is formed on the memory cell area before the spacers are formed on the sidewalls of the gates. Therefore, the memory cell area is prevented from being damaged to mitigate the leakage current problem during the process of forming spacers in the periphery circuit area.
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申请公布号 |
US2007259493(A1) |
申请公布日期 |
2007.11.08 |
申请号 |
US20070745059 |
申请日期 |
2007.05.07 |
申请人 |
CHANG KENT KUOHUA;KIM JONGOH;WU YIDER |
发明人 |
CHANG KENT KUOHUA;KIM JONGOH;WU YIDER |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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