| 摘要 |
A method for manufacturing a semiconductor laser diode is provided to simplify a process by forming a current blocking layer on the upper part of a fine ridge layer by a polishing method and a dry etching method. A method for manufacturing a semiconductor laser diode comprising plural layers formed between P and N electrodes includes the steps for depositing a first clad layer(310) on the upper side of a substrate(300) including plural functional unit layers, together with a protruded ridge layer(320); depositing a current blocking layer(330) on the upper side of the first clad layer and the ridge layer in the same thickness; depositing a protective film layer(340) on the upper side of the current blocking layer in the predetermined thickness; and removing the current blocking layer deposited on the upper side of the ridge layer, after removing the protective film layer. |
