| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing device and method, in which both surfaces of a sheet-shaped workpiece such as silicon wafers or glass panels are simultaneously polished, and a plurality of workpieces of different thickness or flatness is simultaneously polished to achieve high precision and to finish a thickness to a target value. <P>SOLUTION: In the polishing method, target size values as branching points for respective processes are determined based on predetermined finished thickness under consideration of parallelism and flatness of the workpieces before polishing work, and thickness irregularity in a batch, and the load of an upper lap plate to be provided to the workpieces, the rotation to revolution ratio of a carrier, work speed, and feed quantity of polishing agent are program-set. Even workpieces having large thickness irregularity before the polishing work, or workpieces such as fragile material having a limit in tolerable load can be polished with high precision to have target thickness without cracking or chipping. <P>COPYRIGHT: (C)2008,JPO&INPIT |
