| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is capable of being reduced in size while protecting degradation in withstand voltage. SOLUTION: The semiconductor device is configured in such a manner that it is equipped with an n-type semiconductor substrate 4, a p-type semiconductor layer 5 formed on the semiconductor substrate 4, an n-type semiconductor region 6 formed on the surface of the semiconductor layer 5, a trench 7 formed extending from the surface of the semiconductor region 6 to the semiconductor substrate 4, a gate electrode 9 formed inside the trench 7, a trench 13 formed between the trench 7 and the adjacent trench 7 extending from the surface to near the bottom of the semiconductor layer 5, and a p-type semiconductor region 14 formed extending from the bottom of the trench 13 to the semiconductor substrate 4. COPYRIGHT: (C)2008,JPO&INPIT
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