| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device which can improve the sensitivity by suppressing reflected light, and can sufficiently suppress a dark output and white defects even if a silicon nitride film is used as an anti-reflection film, and also to provide its manufacturing method. SOLUTION: The anti-reflection film (18a and 19a) on a light receiver (13) comprises a multilayer film which comprises a gate insulation film (11), a silicon oxide film (18a), and a cap film (19a) having a refractive index which is larger than that of the silicon oxide film (18a) and smaller than that of a semiconductor substrate (10). The thicknesses of the silicon oxide film (18a) and the cap film (19a) are set to such values that the reflection from the light receiver (13) may be minimum with respect to energy beams having a predetermined wavelength component out of energy beams incident into the light receiving portion (13). COPYRIGHT: (C)2008,JPO&INPIT
|
