| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device in which heat resistance is enhanced by suppressing nickel silicide aggregation reaction in a nickel silicide (NiSi) region, and to obtain its fabrication process. SOLUTION: Nitrogen (N<SB>2</SB>) ions are implanted into the nickel silicide region of an N channel MIS transistor, and boron difluoride (BF<SB>2</SB>) ions are implanted into the nickel silicide region of a p-channel MIS transistor. Nickel silicide aggregation reaction is suppressed when the nitrogen ions and boron ions are implanted, respectively, in each transistor. Consequently, a semiconductor device is obtained in which heat resistance is enhanced. COPYRIGHT: (C)2008,JPO&INPIT
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