| 摘要 |
A magnetic memory device comprises a magnetic tunnel junction (MTJ) having a ferromagnetic free layer, and exhibits a first, relatively high resistance state, and a second, relatively low resistance state. To write to the magnetic memory device a current I<SUB>MTJ </SUB>is driven through the MTJ. For a first duration, the current is equal to a DC threshold current, being the DC current required to switch the multilayer structure between the first state and the second state. This induces a C-like domain structure in the free layer. For a second duration, the current I<SUB>MTJ </SUB>is larger than the DC threshold current. This causes the MTJ to switch states. The current requited to cause switching is less than that required using a uniform current pulse.
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