发明名称 METHOD FOR CONTROLLED DENSITY GROWTH OF CARBON NANOTUBES
摘要 Described is a method for preparation of carbon nanotubes (CNTs) with medium to low-site density growth for use in field emission devices (FEDs). The method involves the deposition of a non-catalytic metal layer (interlayer), preferably a metallic conductor, onto the surface of a substrate, prior to the deposition of a catalytic layer (overlayer). The interlayer allows for only partial (sparse) growth of CNTs on the substrate, and helps to prevent resist layer "lift-off" when photolithographic processing is employed.
申请公布号 US2007259128(A1) 申请公布日期 2007.11.08
申请号 US20060381981 申请日期 2006.05.05
申请人 PARSAPOUR FARZAD 发明人 PARSAPOUR FARZAD
分类号 D01F9/12;C23C16/00;H05H1/24 主分类号 D01F9/12
代理机构 代理人
主权项
地址