NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS

摘要

A nonvolatile memory apparatus (200) includes a separate controller circuit (201) and memory circuit (203) . The controller circuit is fabricated on a first integrated circuit chip. The controller circuit includes a plurality of charge pump circuits (209) , a system interface logic circuit (211) , a memory control logic circuit (213) , and one or more analog circuits (207) . The memory circuit is fabricated on a second integrated circuit chip and includes a column decoder (225) , a row decoder (227) , a control register (221) , and a data register (223) . A memory-controller interface area (205) includes a first plurality of die bond pads (217) on the first integrated circuit chip and a second plurality of die bond pads (219) on the second integrated circuit chip such that the first and second integrated circuit chips may be die-bonded together. A single controller circuit may interface with a plurality of memory circuits, thus further reducing overall costs as each memory circuit does not require a dedicated controller circuit.