SOI WAFER MANUFACTURING METHOD

摘要

Provided is an SOI wafer manufacturing method which includes at least a bonding heat treatment step, in which a wafer having a base wafer and a bond wafer bonded is heat-treated to improve bonding strength. The method is provided with a step of implanting ions of argon from one surface of the base wafer or the bond wafer at a dose quantity of 1OE0¹⁵atoms/cm² or more, at least prior to a bonding step. In the bonding step, the surface from which the ions of argon are implanted is permitted to be a bonding plane. The speed of temperature increase up to the treatment temperature of the bonding heat treatment is 5°C/min or higher. Thus, a polycrystalline silicon layer having a uniform thickness is introduced into the vicinity of an embedded insulating layer, and an SOI wafer having high gettering performance against metallic contamination in an SOI layer can be more efficiently manufactured by a easy and low cost method.