发明名称 POST-ETCH TREATMENT SYSTEM FOR REMOVING RESIDUE ON A SUBSTRATE
摘要 <p>A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue ca include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The high temperature pedestal comprises a scored upper surface configured to minimize substrate slippage.</p>
申请公布号 WO2007126468(A1) 申请公布日期 2007.11.08
申请号 WO2007US03105 申请日期 2007.02.07
申请人 TOKYO ELECTRON LIMITED;TSUKAMOTO, YUJI;KUDO, YASUHISU;HAMELIN, THOMAS 发明人 TSUKAMOTO, YUJI;KUDO, YASUHISU;HAMELIN, THOMAS
分类号 H01L21/00;H01L21/3105 主分类号 H01L21/00
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