发明名称 |
POST-ETCH TREATMENT SYSTEM FOR REMOVING RESIDUE ON A SUBSTRATE |
摘要 |
<p>A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue ca include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The high temperature pedestal comprises a scored upper surface configured to minimize substrate slippage.</p> |
申请公布号 |
WO2007126468(A1) |
申请公布日期 |
2007.11.08 |
申请号 |
WO2007US03105 |
申请日期 |
2007.02.07 |
申请人 |
TOKYO ELECTRON LIMITED;TSUKAMOTO, YUJI;KUDO, YASUHISU;HAMELIN, THOMAS |
发明人 |
TSUKAMOTO, YUJI;KUDO, YASUHISU;HAMELIN, THOMAS |
分类号 |
H01L21/00;H01L21/3105 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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