| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing electrostatic surge with no increase in leak current. SOLUTION: A protection circuit for protecting an internal circuit is provided between a power source line and a ground line. The protection circuit comprises a protection transistor 121 in which a drain is connected to the power source line while a source and gate are connected to the ground line. Further, the protection transistor 121 is constituted by integrating two kinds of transistor structure parts 122 and 123. The gate length of the transistor 123 is longer than that of the transistor 122. The total gate width of the transistor 123 is larger than that of the transistor 122. COPYRIGHT: (C)2008,JPO&INPIT
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