| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a plasma processing method hardly allowing a dense difference to occur in a film thickness of an oxide film or a nitride film formed by plasma processing. SOLUTION: The plasma oxide processing apparatus 100 houses a wafer W. The apparatus has a chamber 1 in which a vacuum state is sustained for performing plasma processing inside, a loading stand 2 for placing the wafer W in this chamber 1; and a transparent plate 28 for partitioning a plasma processing space formed between a flat antenna member 31 having a plurality of microwave transmissive holes 32 for introducing a microwave into the chamber 1, and the loading stand 2; and a gap G between this loading stand 2 and the wafer W on the transparent plate 28 is 20 mm to 100 mm. COPYRIGHT: (C)2008,JPO&INPIT
|
