| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide single crystal having no crack. SOLUTION: After completing crystal growth of a cylindrical silicon carbide single crystal produced by a sublimation recrystallization method, compressive stress of -3.5 MPa to 35 MPa is imparted in a circumference direction to the peripheral part of the single crystal so as to prevent cracks from generating in the single crystal after the crystal growth or upon processing into a substrate for an electronic material. COPYRIGHT: (C)2008,JPO&INPIT
|
