Shield structures are provided. A first and second shield lines are formed over a substrate and coupled with a first voltage. A conductive line is formed between the first and the second shield lines, and coupled with a second voltage. The first shield layer is formed over the substrate and coupled to the first and the second shield lines via at least one first conductive structure.
申请公布号
US2007257339(A1)
申请公布日期
2007.11.08
申请号
US20060382202
申请日期
2006.05.08
申请人
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人
CHEN HSIEN-WEI;CHANG VICTOR C.Y.;YEH TZU-JIN;CHO SHU-YING;CHANG KEH-JENG;YOUNG KWANG-LEEI