| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the electrode capacitance of its each external electrode formed on a thin silicon substrate is suppressed to be low and the warping quantity of the silicon substrate is suppressed to be small, and to provide a method of manufacturing the same. <P>SOLUTION: The package structure of the semiconductor device in a wafer-level chip size has a thin insulating film 15 covering uniformly semiconductor circuits formed on a silicon substrate 11, and thick doughnut-formed insulating film 18 which is formed on the thin insulating film 15 corresponding to each of external electrodes 22 and mounts the external electrodes 22. The silicon substrate 11 is polished from its backside, and has a thickness smaller than 0.6 mm. <P>COPYRIGHT: (C)2008,JPO&INPIT |
