| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a piezoelectric element forming method which reduces formed etching residues. <P>SOLUTION: The method comprises a step of forming a wet etching protecting film 2, exposing the surface of a piezoelectric wafer 10 having a resist film 3 formed thereon through a specified outlined pattern, removing the exposed or not exposed resist film 3, removing the wet etching protective film 2 at the spots empty of the resist film 3, wet etching the exposed portions until piercing them, removing the whole resist film 3 on the piezoelectric wafer 10 to form an Ni film 4 on the wet etching protective film 2, dry etching the exposed surface K of the pierced piezoelectric wafer 10, and removing the Ni film 4 formed on the wafer 10 and the etching protective film 2. <P>COPYRIGHT: (C)2008,JPO&INPIT |
