SEMICONDUCTOR ON GLASS INSULATOR MADE USING IMPROVED THINNING PROCESS
摘要
Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.
申请公布号
WO2007127074(A2)
申请公布日期
2007.11.08
申请号
WO2007US09199
申请日期
2007.04.16
申请人
CORNING INCORPORATED;FENG, JIANGWEI;GADKAREE, KISHOR P.;MACH, JOSEPH F.;MOORE, MICHAEL J.;STOCKER, MARK A.
发明人
FENG, JIANGWEI;GADKAREE, KISHOR P.;MACH, JOSEPH F.;MOORE, MICHAEL J.;STOCKER, MARK A.