POLYMERS, RESIST COMPOSITIONS AND PATTERNING PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a resist composition which is sensitive to high-energy radiations, has excellent sensitivity to wavelengths of ≤200 nm, and has improved transparency and excellent plasma etching resistance.

SOLUTION: The polymer has repeating units represented by formulas (1m), (1p), wherein R1, R2are each H, F, an alkyl, or a fluorinated alkyl; R3is F, or a linear, branched or cyclic fluorinated alkyl; R4is an acid-unstable group having at least 6 to 20C cyclic structure. The resist material contains the polymer.

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