| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus that can perform uniform substrate processing and can be easily operated. SOLUTION: This substrate processing apparatus is configured as follows. Multiple pins 3 are formed on the substrate mounting surface of a susceptor 1 that is heated by high frequency induction, a heater and the like. A wafer 2 is floated from the substrate mounting surface of the susceptor 1 and is mounted on the susceptor 1. While the wafer 2 is heated by radiative heating and gaseous phase thermal conduction from the susceptor 1 to the wafer 2, the ashing of resist on the wafer 2 is performed. In this apparatus, the susceptor 1 does not directly touch the substrate mounting surface. As a result, the uniformity of the temperature of the wafer 2, and the uniformity of the related ashing speed have phenomenally improved compares with prior art, thereby enabling uniform ashing. The conditions for the resist ashing can be easily changed only by adjusting the height from the surface of the susceptor 1 of the pin 3. COPYRIGHT: (C)2008,JPO&INPIT |
