METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a method of manufacturing semiconductor devices for manufacturing a semiconductor device with satisfactory productivity by simple processes. SOLUTION: The manufacturing method comprises: a process for forming a plurality of gate electrodes on a semiconductor substrate via a gate insulation film; a process for forming an insulation film for covering the gate electrode; a process for exposing the surface of the gate electrode; a process for forming a metal film having a large etching selection ratio to the insulation film on the semiconductor substrate, and for etching the metal film to form a silicification prevention film for preventing silicification in the gate electrode on the gate electrode that does not perform silicification at least in the gate electrodes; a process for forming a metal film for forming a silicide film on the gate electrode that is not covered with the silicification prevention film; a process for allowing the gate electrode to react with the metal film to silicify the gate electrode; a process for removing an unreacted metal film in the metal film for forming a silicide film and the silicification prevention film; and a process for forming an interlayer insulating film on the semiconductor substrate. COPYRIGHT: (C)2008,JPO&INPIT