| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing method of wafer which is prominent for dicing while fixing the wafer or the like, and to provide a tape for processing wafer which is employed therefor. SOLUTION: The processing method of wafer comprises: (a) a process for bonding a bonding agent layer and a substrate film, provided with an adhesive agent layer on the surface thereof, sequentially so as to bond at least the bonding agent layer with the surface of the adhesive agent layer and arranging the same on one side of the wafer, (b) a process for dicing the wafer along the desired configuration of a chip, (c) a process for separating the chip with the bonding agent layer from the adhesive agent layer. In this case, the copolymer of alkyl (meta)acrylate and polarized group containing monomer is contained in the adhesive agent layer and with respect to the surface of adhesive agent layer at a side contacted with the bonding agent layer, the IR absorption strength ratio of the absorption maximum value in the range within 3,480cm<SP>-1</SP>-3,560cm<SP>-1</SP>to the absorption maximum value in a range within 1,710cm<SP>-1</SP>-1,740cm<SP>-1</SP>obtained through ATR method of FT-IR with respect to the adhesive agent layer surface at the side contacted with the bonding agent layer is specified so as to be not more than 0.02. COPYRIGHT: (C)2008,JPO&INPIT |
