发明名称 Magnetischer Direktzugriffspeicher
摘要 A read blocks (BKjn) are connected to a read bit line (BLj). The read block (BKjn) has MTJ elements (12) connected in series or in parallel, or arranged by combining series and parallel connections between the read bit line (BLj) and a ground terminal (VSS). The MTJ elements (12) are stacked on a semiconductor substrate. The read bit line (BLj) is arranged on the MTJ elements (12) stacked. A write word line (WWL3n, WWL3n+1, WWL3n+2) extending in the X-direction and a write bit line (BLj0, BLj1) extending in the Y-direction are present near the MTJ elements (12) in the read block (BKjn). <IMAGE>
申请公布号 DE60217462(T2) 申请公布日期 2007.11.08
申请号 DE2002617462T 申请日期 2002.06.28
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 IWATA, YOSHIHISA;ASAO, YOSHIAKI;HOSOTANI, KEIJI;MIYAMOTO, JUNICHI
分类号 G11C11/15;G11C11/16 主分类号 G11C11/15
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