摘要 |
A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.
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申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;ZHONG, HONG;KAEDING, JOHN, FRANCIS;SHARMA, RAJAT;SPECK, JAMES, STEPHEN;DENBAARS, STEVEN, P.;NAKAMURA, SHUJI |
发明人 |
ZHONG, HONG;KAEDING, JOHN, FRANCIS;SHARMA, RAJAT;SPECK, JAMES, STEPHEN;DENBAARS, STEVEN, P.;NAKAMURA, SHUJI |