发明名称 |
AUTOMATIC PROCESS CONTROL OF AFTER-ETCH-INSPECTION CRITICAL DIMENSION |
摘要 |
Automatic process control of after-etch-inspection critical dimension. A dielectric layer is deposited over a substrate and is then planarized to a first thickness. A cap oxide layer having a second thickness is deposited, wherein the combination of the first thickness and the second thickness is substantially constant. An ADI CD of a contact hole to be formed on the substrate is altered and pre-determined based on the second thickness of the cap oxide layer. A photoresist layer is formed on the cap oxide layer. An opening having the predetermined ADI CD is formed in the photoresist layer. Using the photoresist layer as an etching mask, the cap oxide layer and the dielectric layer is etched through the opening to form a contact hole having an AEI CD.
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申请公布号 |
US2007259527(A1) |
申请公布日期 |
2007.11.08 |
申请号 |
US20060382060 |
申请日期 |
2006.05.08 |
申请人 |
CHOU PEI-YU;TSAI WEN-CHOU;LIAO JIUNN-HSIUNG |
发明人 |
CHOU PEI-YU;TSAI WEN-CHOU;LIAO JIUNN-HSIUNG |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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