| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which peeling is hard to occur between an insulating film and an contact metal film, and to provide a method of manufacturing the same. <P>SOLUTION: In the semiconductor device, a semiconductor chip 10 and a semiconductor chip 20 are electrically connected to a conductive member 40 through a solder 14 and a solder 24. The conductive member 40 is formed in a resin film 50. The conductive member 40 contains an Ni film 44. The Ni film 44 prevents diffusion of the solder 24. An Ni film 66 is provided between the conductive member 40 and the solder 14. The Ni film 66 prevents diffusion of the solder 14. On a surface S1 of the resin film 50 and the conductive member 40, a Ti film 62 is so formed as to contact the resin film 50 and the conductive member 40. The Ti film 62 has a higher adhesive property to the resin film 50 than that of the solder 14 and the Ni film 66. <P>COPYRIGHT: (C)2008,JPO&INPIT |
