发明名称 |
Light Emitting Element and Manufacturing Method Thereof |
摘要 |
According to the invention, an insulating or semi-insulating barrier layer which has a thickness where a tunnel current can flow through is provided between a hole injection electrode and an organic compound layer with hole transport characteristics (a hole injection layer or a hole transport layer). Specifically, a thin insulating or semi-insulating barrier layer which contains silicon or silicon oxide; silicon or silicon oxide and a light transmitting conductive oxide material; or silicon or silicon oxide, a light transmitting conductive oxide material, and carbon may be provided between a light transmitting conductive oxide film formed of a light transmitting conductive oxide material, such as ITO and a hole injection layer containing an organic compound.
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申请公布号 |
US2007259466(A1) |
申请公布日期 |
2007.11.08 |
申请号 |
US20070779363 |
申请日期 |
2007.07.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SAKATA JUNICHIRO;MURAKAMI MASAKAZU;MORIYA KOJI;OIKAWA YOSHIAKI;ASAMI TAKETOMI;OHTANI HISASHI |
分类号 |
H01L21/04;H01L33/00;H01L51/50;H05B33/10;H05B33/12;H05B33/14;H05B33/20;H05B33/22 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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