发明名称 |
PHASE CHANGE MEMORY ELEMENTS USING SELF- ALIGNED PHASE CHANGE MATERIAL LAYERS AND METHODS OF MAKING AND USING SAME |
摘要 |
A phase change memory element and method of forming the same. The memory element includes a substrate supporting a first electrode. An insulating material element is positioned over the first electrode, and a phase change material layer is formed over the first electrode and surrounding the insulating material element such that the phase change material layer has a lower surface that is in electrical communication with the first electrode. The memory element also has a second electrode in electrical communication with an upper surface of the phase change material layer. |
申请公布号 |
WO2007126690(A2) |
申请公布日期 |
2007.11.08 |
申请号 |
WO2007US07188 |
申请日期 |
2007.03.23 |
申请人 |
MICRON TECHNOLOGY, INC.;LIU, JUN |
发明人 |
LIU, JUN |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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