发明名称 |
FILM FORMING METHOD, FILM FORMING DEVICE, AND STORAGE MEDIUM |
摘要 |
<p>An object (a semiconductor wafer (W), for example) having a recess formed in its surface is placed on a placing bed (34) disposed in a treating container (24) made evacuative. A plasma is then generated inside of the treating container (24), in which a metal target (70) is ionized by the plasma to produce metal ions. A bias electric power is fed to the placing bed (34), so that the metal ions are attracted by the fed bias electric power to the object placed on the placing bed (34), thereby to form a thin film on the surface of the object including the face in the recess. The magnitude of the bias electric power is varied within a range, in which the surface of the object is not substantially sputtered.</p> |
申请公布号 |
WO2007125748(A1) |
申请公布日期 |
2007.11.08 |
申请号 |
WO2007JP57899 |
申请日期 |
2007.04.10 |
申请人 |
TOKYO ELECTRON LIMITED;SAKUMA, TAKASHI;YOKOYAMA, OSAMU;IKEDA, TARO;HATANO, TATSUO;MIZUSAWA, YASUSHI |
发明人 |
SAKUMA, TAKASHI;YOKOYAMA, OSAMU;IKEDA, TARO;HATANO, TATSUO;MIZUSAWA, YASUSHI |
分类号 |
C23C14/34;H01L21/285;H01L21/3205;H01L23/52 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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