| 摘要 |
An apparatus and a method for inputting data of a semiconductor memory device are provided to improve TDQSS margin by separating operations, depending on whether a data strobe signal lags a clock signal or not, by comparing phases of the data strobe signal and the clock signal. A phase sensing unit(400) outputs a first phase comparison signal and a second phase comparison signal by comparing phases of a data strobe signal and a clock signal. A first delay control unit(500) outputs a second data input strobe signal by determining delay of a first data input strobe signal, in response to the first phase comparison signal. An internal clock synchronization unit(600) outputs first internal output data and second internal output data by synchronizing first align data and second align data to the clock signal, in response to the second data input strobe signal. A second delay control unit(700) determines delay of the first internal output data and the second internal output data, and outputs first output data and second output data, in response to the second phase comparison signal.
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