METHOD FOR FORMING AL LAYER IN SEMICONDUCTOR DEVICE

摘要

A method for forming an aluminum layer of a semiconductor device is provided to bury a recess groove into a contact hole or a contact by depositing an aluminum layer at temperature of 400 degrees centigrade. An insulating layer(120) having a contact hole is formed on a semiconductor substrate(110). A first aluminum layer(141) for burying the contact hole is formed by eliminating a flow of a heat transfer gas to a rear surface of the semiconductor substrate and performing a cold deposition process of low temperature. A second aluminum layer(143) is formed on the first aluminum layer by performing a hot deposition process of relatively high temperature together with the flow of the heat transfer gas to the rear surface of the semiconductor substrate. A third aluminum layer is deposited on the second aluminum layer by performing the cold deposition process, in order to improve a relatively high surface roughness of the second aluminum layer.