| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that a region having a large data rate causes the variation of an exposure amount, resulting in a small process window in a lithographic step in a manufacturing process of a semiconductor device in a conventional technique. SOLUTION: The semiconductor device 1 is provided with a wiring 103a (first wiring) extending in a first direction (horizontal direction in the figure) in a substrate plane of a substrate; a wiring 103b (second wiring) extending along the wiring 103a and spaced from the wiring 103a in plan view; and a slit via 106 (slit-like via plug) extending in a second direction (vertical direction in the figure) perpendicular to the first direction among the directions of the substrate plane of the substrate, and used for electrically connecting the wiring 103a to the wiring 103b. COPYRIGHT: (C)2008,JPO&INPIT
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