| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device without any disconnection due to gaps generated at the boundary between a silicide region and a non-silicide region, when forming wiring having a completely silicified region partially. SOLUTION: An insulating diffusion prevention film 5 is arranged between polysilicon wiring 12 formed on a substrate 1 and silicide wiring 13 arranged opposite to the polysilicon wiring 12. Then, the polysilicon wiring 12 and the silicide wiring 13 are connected electrically by a connection structure composed of contact holes 20, 21 into which metal films 9, 10 are embedded, and wiring 11. When forming the silicide wiring 13, the diffusion of silicon from the polysilicon wiring 12 is prevented by the diffusion prevention film 5, thus preventing gaps from being generated between the polysilicon wiring 12 and the silicide wiring 13. COPYRIGHT: (C)2008,JPO&INPIT
|
