SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device whose threshold voltage is easily controlled, and which can be operated at a low voltage. SOLUTION: A source area 40 and a drain area 50 are separately located on a semiconductor substrate 20 element-separated by an element separating area 30. A gate electrode 70 formed through a gate insulating film 60 is formed between the source area 40 and the drain area 50. On the interface between the gate insulating film 60 and the gate electrode 70, a plurality of particles of silicon nitride 80 are scatteringly buried in the gate electrode 70 in contact with the gate insulating film 60. COPYRIGHT: (C)2008,JPO&INPIT