| 摘要 |
A single-crystalline MgO (001) substrate 11 is prepared, and then an epitaxial Fe (001) lower electrode (first electrode) 17 with a thickness of 50 nm is grown on a MgO (001) seed layer 15 at room temperature. Annealing is then performed in ultrahigh vacuum (2x10<SUP>-8 </SUP>Pa) at 350° C. A 2-nm thick MgO (001) barrier layer 21 is epitaxially grown on the Fe (001) lower electrode (first electrode) 17 at room temperature, using electron beam evaporation of MgO. A Fe (001) upper electrode (second electrode) 23 with a thickness of 10 nm is then grown on the MgO (001) barrier layer 21 at room temperature, successively followed by the deposition of a IrMn layer 25 with a thickness of 10 nm on the Fe (001) upper electrode (second electrode) 23 . The IrMn layer 25 is used for realizing an antiparallel magnetization alignment by giving an exchange-biasing field to the upper electrode 23 . Thereafter, the above-prepared sample is subjected to microfabrication so as to obtain a Fe (001)/MgO (001)/Fe (001) MTJ device with an enhanced MR ratio.
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