发明名称 |
High temperature LC pressure transducer and methods for making the same |
摘要 |
A high temperature pressure capacitor is fabricated utilizing two high temperature substrate wafers. The substrates may be silicon carbide (SiC) or aluminum nitride (AIN). The first substrate has a metal conductive plate positioned on a top surface thereof. The top surface and plate are covered with a dielectric layer. The second substrate has a plate accommodating recess on the top surface thereof. Deposited in the recess is a second conductive plate. The first and second wafers are bonded together via the dielectric layer where the first and second plates face each other. Upon application of a force to the first wafer the diaphragm portion of the first wafer deflects causing the first plate to move and thereby varying capacitance. An inductor may be fabricated on a bottom surface of the second wafer to provide an LC circuit whose resonant frequency varies as a function of capacitance and therefore as a function of pressure.
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申请公布号 |
US2007256501(A1) |
申请公布日期 |
2007.11.08 |
申请号 |
US20060418653 |
申请日期 |
2006.05.05 |
申请人 |
KURTZ ANTHONY D;WILSON NATHANIEL J |
发明人 |
KURTZ ANTHONY D.;WILSON NATHANIEL J. |
分类号 |
G01B7/16 |
主分类号 |
G01B7/16 |
代理机构 |
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代理人 |
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地址 |
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