发明名称 APPARATUS AND METHOD FOR TREATING SUBSTRATE
摘要 A method and an apparatus for treating a substrate are provided to perform a uniform plasma treatment on a wafer by reducing a size of a housing. A substrate support member(100) supports a substrate to orient a pattern surface upward. A plasma supply unit(200) supplies a standard pressure plasma on the substrate. A transfer unit changes a relative position between the plasma supply unit and the substrate while transferring the substrate from the plasma supply unit. The plasma supply unit includes plural first electrodes(240), plural second electrodes(260), and a housing(220). The first electrodes are arranged in a first direction and apart from each other in a second direction which is normal to the first direction. A first voltage is applied on the first electrodes. The second electrodes are arranged in the first direction and apart from each other in the second direction which is normal to the first direction. A second voltage lower than the first voltage is applied to the second electrodes. A length of the housing in the first direction is equal to or greater than a diameter of the substrate, while a length of the housing in the second direction is smaller than the diameter of the substrate. The first and second electrodes are alternatively arranged with respect to each other to generate the plasma between the first and second electrodes.
申请公布号 KR100774980(B1) 申请公布日期 2007.11.08
申请号 KR20060069369 申请日期 2006.07.24
申请人 SEMES CO., LTD. 发明人 KIM, YI JUNG;SEO, KYUNG JIN
分类号 H01L21/205;H01L21/3065 主分类号 H01L21/205
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