RESIST MATERIAL AND PATTERN FORMING METHOD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To obtain a resist material which causes neither surface roughness nor pattern roughness to exposure light of which the wavelength is 300 nm band or less.

SOLUTION: A resist film 102 is formed on a substrate 101 from the resist material containing a base polymer comprising poly(vinyldi(adamantoxymethylsulfonamide) (30 mol%)-vinylsulfonamide (70 mol%)) and an acid generator. The formed resist film 102 is pattern-exposed by selective irradiation with exposure light 104 comprising high-energy lines or electron beams of which the wavelength is 100-300 nm band or 1-30 nm band. The pattern-exposed resist film 102 is developed to form a resist pattern 102a.

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