发明名称 |
Structures and Methods of a Bistable Resistive Random Access Memory |
摘要 |
Structures and methods to form a bistable resistive random access memory for reducing the amount of heat dissipation from electrodes by confining a heating region in the memory cell device are described. The heating region is confined in a kernel comprising a programmable resistive memory material that is in contact with an upper programmable resistive memory member and a lower programmable resistive memory member. The lower programmable resistive member has sides that align with sides of a bottom electrode comprising a tungsten plug. The lower programmable resistive member and the bottom electrode function a first conductor so that the amount of heat dissipation from the first conductor is reduced. The upper programmable resistive memory material and a top electrode function as a second conductor so that the amount of heat dissipation from the second conductor is reduced.
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申请公布号 |
US2007257300(A1) |
申请公布日期 |
2007.11.08 |
申请号 |
US20060381973 |
申请日期 |
2006.05.05 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HO CHIAHUA;LAI ERH-KUN;HSIEH KUANG Y. |
分类号 |
H01L29/788;H01L21/336;H01L21/8234;H01L21/8244 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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