发明名称 Enhanced lithographic resolution through double exposure
摘要 A system and method for enhancing the image resolution in a lithographic system, is presented herein. The invention comprises decomposing a reticle pattern into at least two constituent sub-patterns that are capable of being optically resolved by the lithographic system, coating a substrate with a pre-specified photoresist layer, and exposing a first of the at least two constituent sub-patterns by directing a projection beam through the first sub-pattern such that the lithographic system produces a first sub-pattern image onto the pre-specified photoresist layer of the substrate. The invention further comprises processing the exposed substrate, exposing a second of the at least two constituent sub-patterns by directing the projection beam through the second sub-pattern such that the lithographic system produces a second sub-pattern image onto the pre-specified photoresist layer of the substrate, and then combining the first and second sub-pattern images to produce a desired pattern on the substrate.
申请公布号 US2007258073(A1) 申请公布日期 2007.11.08
申请号 US20070822995 申请日期 2007.07.11
申请人 ASML NETHERLANDS B.V. 发明人 FINDERS JOZEF M.;FLAGELLO DONIS G.;HANSEN STEVEN G.
分类号 G03B27/42;G03F7/20;H01L21/027 主分类号 G03B27/42
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