MAGNETIC THIN FILM, MAGNETORESISTIVE ELEMENT USING THE SAME, AND MAGNETIC DEVICE

摘要

Disclosed is a magnetic thin film comprising a substrate (2) and a Co<SUB>2</SUB>Fe(Si<SUB>1-x</SUB>Al<SUB>x</SUB>) thin film (3) formed on the substrate (2), wherein the thin film (3) has an L2<SUB>l</SUB> or B2 structure and x satisfies 0 < x < 1. The magnetic thin film exhibits ferromagnetism and high spin polarizability at room temperature. A buffer layer (4) may be interposed between the substrate (2) and the Co<SUB>2</SUB>Fe(Si<SUB>1-x</SUB>Al<SUB>x</SUB>) thin film (3). A tunnel magnetoresistive element and giant magnetoresistive element using such a magnetic thin film are able to obtain large TMR and GMR at room temperature with low electric current at low magnetic field. Also disclosed are magnetic apparatuses such as a magnetic device, magnetic head and magnetic recording device using such a magnetoresistive element.