| 摘要 |
An image sensor having a dynamic range of extended pixels by integrating a transfer gate and a potential well is provided to manufacture a CMOS sensor array having massive charge storing capacity, a high DR, a great SN-ratio and a minimized size of pixel. An image sensor having a dynamic range of extended pixels includes a charge transfer transistor. And the charge transfer transistor includes a first and a second diffusion region(308,309), a gate(311) for controlling charge transmission from the first diffusion region to the second diffusion region by a control signal. A potential well(320) is integrated at the bottom of the gate. The potential well is formed at the second diffusion region within the substrate of the bottom of the gate.
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