STRUCTURE AND MANUFACTURING METHOD OF EPITAXIAL LAYERS OF GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR

摘要

A structure and a forming method for epitaxial layers of gallium nitride based compound semiconductors are provided to change the surface energy of a substrate by treating the surface of the substrate using Cp2Mg and NH3 as reaction precursors, and to minimize the dislocation density of the gallium nitride based buffer layer, thereby enhancing the light emitting efficiency. A surface treatment process is performed to a surface of a substrate(1) using Cp2Mg and NH3 as reaction precursors. A low temperature gallium nitride based buffer layer(22) is formed. A high temperature gallium nitride based buffer layer(24) is formed on the low temperature gallium nitride based buffer layer.